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參數資料
| 型號： | PHX18NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數： | 8/15頁 |
| 文件大小： | 293K |
| 代理商： | PHX18NQ20T |
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
8 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
9.
Isolation characteristics
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ac77
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
IS
(A)
VGS = 0 V
Tj = 25oC
150oC
03ac79
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10 15 20 25 30 35 40 45 50 55 60
QG (nC)
VGS
ID = 18 A
VDD = 40V
VDD = 160V
Table 6:
Symbol
V
isol
Isolation characteristics
Parameter
RMS isolation voltage
from all three terminals
to external heatsink.
Capacitance from pin 2
(drain) to external
heatsink.
Conditions
f = 50-60 Hz; sinusoidal
waveform; RH
≤
65%; clean
and dust-free.
Min.
Typ.
Max.
2500
Unit
V
C
isol
10
pF
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相關代理商/技術參數 |
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| PHX18NQ20T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| PHX1N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E |
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