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參數(shù)資料
型號(hào)： Q67100-H3260
廠商： SIEMENS AG
英文描述： NONVOLATILE MEMORY 8-KBIT EPROM WITH IC BUS INTERFACE
中文描述： 非易失性內(nèi)存8千比特存儲(chǔ)器總線接口帶IC
文件頁(yè)數(shù)： 15/53頁(yè)
文件大小： 418K
代理商： Q67100-H3260
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
15
12.99
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data Out Current (short circuit)............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
–
V
–
–
0.4
V
μ
A
–
– 5
5
–
I
O(L)
– 5
5
μ
A
–
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
相關(guān)PDF資料
PDF描述
Q67100-H5101 NONVOLATILE MEMORY 8-KBIT EPROM WITH IC BUS INTERFACE
Q67100-Q1019 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
Q67100-Q1030 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q1044 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q1049 4M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-H3261 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range
Q67100-H3262 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range
Q67100-H3434 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3435 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3492 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
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