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參數資料
| 型號： | Q67100-Q1838 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Anti-Static Storage Bags; External Height:18"; External Width:18"; Features:Zipper closure, Amine-free, Noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| 中文描述： | 64兆位同步DRAM |
| 文件頁數： | 15/53頁 |
| 文件大小： | 418K |
| 代理商： | Q67100-Q1838 |
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HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
15
12.99
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data Out Current (short circuit)............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
–
V
–
–
0.4
V
μ
A
–
– 5
5
–
I
O(L)
– 5
5
μ
A
–
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
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|---|---|
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| Q67100-Q1844 | BAG 4X6 SHIELDED ZIP LOCK |
| Q67100-Q2776 | BAG 5X8 SHIELDED ZIP LOCK |
| Q67100-Q2781 | BAG 6X10 SHIELDED ZIP LOCK |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67100-Q1841 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
| Q67100-Q1844 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
| Q67100-Q2001 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module |
| Q67100-Q2002 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| Q67100-Q2003 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
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