- 您現在的位置：買賣IC網 > PDF目錄361235 > Q67100-Q530 (SIEMENS AG) 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM PDF資料下載
參數資料
| 型號： | Q67100-Q530 |
| 廠商： | SIEMENS AG |
| 英文描述： | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| 中文描述： | 256畝× 4位動態隨機存儲器的低功耗256畝× 4位動態隨機存儲器 |
| 文件頁數： | 21/53頁 |
| 文件大小： | 418K |
| 代理商： | Q67100-Q530 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
20
Timing Diagrams
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. Burst Termination
8.1 Termination of a full Page Burst Write Operation
8.2 Termination of a full Page Burst Write Operation
9. AC- Parameters
9.1 AC Parameters for a Write Timing
9.2 AC Parameters for a Read Timing
10. Mode Register Set
11. Power on Sequence and Auto Refresh (CBR)
12. Clock Suspension (using CKE)
12. 1 Clock Suspension During Burst Read CAS Latency = 2
12. 2 Clock Suspension During Burst Read CAS Latency = 3
12. 3 Clock Suspension During Burst Write CAS Latency = 2
12. 4 Clock Suspension During Burst Write CAS Latency = 3
13. Power Down Mode and Clock Suspend
14. Self Refresh ( Entry and Exit )
15. Auto Refresh ( CBR )
16. Random Column Read ( Page within same Bank)
16.1 CAS Latency = 2
16.2 CAS Latency = 3
17. Random Column Write ( Page within same Bank)
17.1 CAS Latency = 2
17.2 CAS Latency = 3
相關PDF資料 |
PDF描述 |
|---|---|
| Q67100-Q536 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q537 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q542 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q543 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q607 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67100-Q536 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q537 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q542 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q543 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| Q67100-Q607 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
發布緊急采購，3分鐘左右您將得到回復。