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參數資料
型號： S29GL032M10BFIR22
廠商： SPANSION LLC
元件分類： PROM
英文描述： T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64
文件頁數： 3/158頁
文件大小： 4695K
代理商： S29GL032M10BFIR22
100
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00_B1_E August 4, 2004
Data she e t
Table 32. System Interface String
Note: CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the Ordering
Information tables to obtain the VCC range for particular part numbers. Please contact the Erase and Programming Performance
table for typical timeout specifications.
Addresses
(x16)
Addresses
(x8)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Reserved for future use
20h
40h
0007h
Typical timeout for Min. size buffer write 2N
s (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0001h
Reserved for future use
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
相關PDF資料
PDF描述
S29GL032M10BFIR23 T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination
S29GL032M10BFIR12 MirrorBit Flash Family
S29GL032M10BFIR13 MirrorBit Flash Family
S29GL032M10BFIR30 T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination
S29GL032M10FAIR22 MirrorBit Flash Family
相關代理商/技術參數
參數描述
S29GL032M10BFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10BFIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR32 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR33 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR40 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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