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參數資料
| 型號： | S29GL032M10BFIR30 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | 8 X 9 MM, LEAD FREE, FBGA-48 |
| 文件頁數： | 3/116頁 |
| 文件大?。?/td> | 6024K |
| 代理商： | S29GL032M10BFIR30 |
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98
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 10,000
cycles; checkerboard data pattern.
2. Under worst case conditions of 90
°C; Worst case VCC, 100,000 cycles.
3. Effective programming time (typ) is 15 μs (per word), 7.5 μs (per byte).
4. Effective accelerated programming time (typ) is 12.5 μs (per word), 6.3 μs (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-
byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h
before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program
TSOP Pin and BGA Package Capacitance
For package types TA, TF, BA, BF, FA, FF (refer to Ordering Information Pages):
For package types TB, TC, BB, BC, (refer to Ordering Information Pages):
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
(Notes)
Typ
Max
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h
programming
prior to
erasure
Chip Erase Time
S29GL032M
32
64
sec
S29GL064M
64
128
S29GL128M
128
256
S29GL256M
256
512
Total Write Buffer Program Time (3, 5)
240
s
Excludes
system level
overhead
Total Accelerated Effective Write Buffer Program Time
200
s
Chip Program Time
S29GL032M
31.5
sec
S29GL064M
63
S29GL128M
126
S29GL256M
252
Parameter
Symbol
Parameter
Description
Test
Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
Parameter
Symbol
Parameter
Description
Test
Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP
8
10
pF
BGA
8
10
pF
COUT
Output Capacitance
VOUT = 0
TSOP
8.5
12
pF
BGA
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
TSOP
8
10
pF
BGA
8
10
pF
CIN3
RESET# and WP#/ACC Pin Capacitance
VIN = 0
TSOP
20
25
pF
BGA
15
20
pF
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PDF描述 |
|---|---|
| S29GL032M10FAIR22 | MirrorBit Flash Family |
| S29GL032M10FAIR23 | MirrorBit Flash Family |
| S29GL032M10FAIR30 | MirrorBit Flash Family |
| S29GL032M10FAIR32 | Tantalum Capacitor; Capacitance:220uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530 |
| S29GL032M10FAIR33 | MirrorBit Flash Family |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR42 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR43 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
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