- 您現在的位置：買賣IC網 > PDF目錄192296 > S29GL032M10BFIR30 (SPANSION LLC) T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination PDF資料下載
參數資料
| 型號： | S29GL032M10BFIR30 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | 8 X 9 MM, LEAD FREE, FBGA-48 |
| 文件頁數： | 72/116頁 |
| 文件大小： | 6024K |
| 代理商： | S29GL032M10BFIR30 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁當前第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁
February 7, 2007 S29GL-M_00_B8
S29GL-M MirrorBitTM Flash Family
57
Data
Sheet
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software inter-
rogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-indepen-
dent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h, any time the device is ready to read array data. The system can read CFI informa-
system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode.
The device enters the CFI query mode, and the system can read CFI data at the addresses given
reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Alterna-
tively, contact your sales representative for copies of these documents.
Note: CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the
Ordering Information tables to obtain the VCC range for particular part numbers. See the Erase and Programming
Performance table for typical timeout specifications.
Table 30. CFI Query Identification String
Addresses(x16)
Addresses(x8)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
Address for Alternate OEM Extended Table
(00h = none exists)
Table 31. System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h Reserved for future use
20h
40h
0007h Typical timeout for Min. size buffer write 2
N
s
(00h = not supported)
21h
42h
000Ah Typical timeout per individual block erase 2N ms
22h
44h
0000h Typical timeout for full chip erase 2
N
ms
(00h = not supported)
23h
46h
0001h Reserved for future use
24h
48h
0005h Max. timeout for buffer write 2N times typical
25h
4Ah
0004h Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h Max. timeout for full chip erase 2
N
times typical
(00h = not supported)
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10FAIR22 | MirrorBit Flash Family |
| S29GL032M10FAIR23 | MirrorBit Flash Family |
| S29GL032M10FAIR30 | MirrorBit Flash Family |
| S29GL032M10FAIR32 | Tantalum Capacitor; Capacitance:220uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530 |
| S29GL032M10FAIR33 | MirrorBit Flash Family |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR42 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR43 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
發布緊急采購，3分鐘左右您將得到回復。