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參數資料
| 型號： | S29GL032M10BFIR30 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | 8 X 9 MM, LEAD FREE, FBGA-48 |
| 文件頁數： | 85/116頁 |
| 文件大小： | 6024K |
| 代理商： | S29GL032M10BFIR30 |
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68
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and
then read data from, or program data to, any sector not selected for erasure. This command is
valid only during the sector erase operation, including the 50 s time-out period during the sector
erase command sequence. The Erase Suspend command is ignored if written during the chip
erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device re-
quires a typical of 5 s (maximum of 20 s) to suspend the erase operation. However, when the
Erase Suspend command is written during the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sec-
tors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. See Write Operation
Status for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the erase-sus-
pend-read mode. The system can determine the status of the program operation using the DQ7
or DQ6 status bits, just as in the standard word program operation. See Write Operation Status
for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence.
See Autoselect Mode and Autoselect Command Sequence for details.
To resume the sector erase operation, the system must write the Erase Resume command. Fur-
ther writes of the Resume command are ignored. Another Erase Suspend command can be
written after the chip resumes erasing.
Note: During an erase operation, this flash device performs multiple internal operations which are invisible to the system.
When an erase operation is suspended, any of the internal operations that were not fully completed must be restarted. As
such, if this flash device is continually issued suspend/resume commands in rapid succession, erase progress are impeded
as a function of the number of suspends. The result is a longer cumulative erase time than without suspends. Note that the
additional suspends do not affect device reliability or future performance. In most systems rapid erase/suspend activity
occurs only briefly. In such cases, erase performance is not significantly impacted.
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| S29GL032M10FAIR32 | Tantalum Capacitor; Capacitance:220uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530 |
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相關代理商/技術參數 |
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| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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| S29GL032M10BFIR42 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR43 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
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