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參數資料
| 型號： | S29GL032M10BFIR30 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | 8 X 9 MM, LEAD FREE, FBGA-48 |
| 文件頁數： | 79/116頁 |
| 文件大小： | 6024K |
| 代理商： | S29GL032M10BFIR30 |
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February 7, 2007 S29GL-M_00_B8
S29GL-M MirrorBitTM Flash Family
63
Data
Sheet
Write to an address in a sector different than the one specified during the Write-Buffer-Load
command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the
Starting Address during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded),
DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must be written to
reset the device for the next operation.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a pro-
gram operation is in progress. This flash device is capable of handling multiple write buffer
programming operations on the same write buffer address range without intervening erases. For
applications requiring incremental bit programming, a modified programming method is required;
please contact your local Spansion representative. Any bit in a write buffer address range
cannot be programmed from “0” back to a “1.” Attempting to do so can cause the device to
set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the operation was successful. How-
ever, a succeeding read shows that the data is still “0.” Only erase operations can convert a “0”
to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending
on the particular product. When the system asserts VHH on the WP#/ACC or ACC pin. The device
uses the higher voltage on the WP#/ACC or ACC pin to accelerate the operation. Note that the
WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device
damage can result. WP# has an internal pullup; when unconnected, WP# is at VIH.
Figure 3 illustrates the algorithm for the program operation. See Erase and Program Operations—
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| S29GL032M10FAIR32 | Tantalum Capacitor; Capacitance:220uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530 |
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| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR42 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR43 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
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