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參數資料
型號: SC427MLTRT
廠商: Semtech
文件頁數: 19/33頁
文件大?。?/td> 894K
描述: IC REG DL BUCK/LINEAR 32MLPQ
標準包裝: 1
系列: EcoSpeed®, SmartDrive™
拓撲: 降壓(降壓)(1),線性(LDO)(1)
功能: 任何功能
輸出數: 2
頻率 - 開關: 1MHz
電壓/電流 - 輸出 1: 可調,10A
電壓/電流 - 輸出 2: 5V,200mA
帶 LED 驅動器:
帶監控器:
帶序列發生器:
電源電壓: 3 V ~ 28 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 32-VFQFN 裸露焊盤
供應商設備封裝: 32-MLPQ(5x5)
包裝: 標準包裝
其它名稱: SC427MLDKR
SC417/SC427
19
FB Ripple
Voltage (V
FB
)
FB threshold
(500mV)
Inductor
Current
DH
DL
(0A)
 40祍 time-out
minimum f
SW
 ~ 25kHz
After the 40祍ec time-out, DL drives high if V
FB
 
has not reached the FB threshold.
DH On-time is triggered when
V
FB
 reaches the FB Threshold
On-time
(T
ON
)
Figure 5  Ultrasonic Power-save Operation
Power-save Mode Operation (SC427)
The SC427 provides power-save operation at light loads
with no minimum operating frequency. With power-save
enabled, the internal zero crossing comparator monitors
the inductor current via the voltage across the low-side
MOSFET during the off-time. If the inductor current falls to
zero for 8 consecutive switching cycles, the controller
enters power-save operation. It will turn off the low-side
MOSFET on each subsequent cycle provided that the
current crosses zero. At this time both MOSFETs remain
off until V
FB
 drops to the 500mV threshold. Because the
MOSFETs are off, the load is supplied by the output capaci-
tor. If the inductor current does not reach zero on any
switching cycle, the controller immediately exits power-
save and returns to forced continuous mode. Figure 6
shows power-save operation at light loads.
FB Ripple
Voltage
(V
FB
)
FB threshold
DL
DH
Inductor
Current
Zero (0A)
DH On-time is triggered when
V
FB
 reaches the FB Threshold.
(500mV)
On-time (T
ON
)
DL drives high when on-time is completed.
DL remains high until inductor current reaches zero.
Dead time varies
according to load
Figure 6  Power-save Operation
Smart Power-save Protection
Active loads may leak current from a higher voltage into
the switcher output. Under light load conditions with
power-save enabled, this can force V
OUT
 to slowly rise and
reach the over-voltage threshold, resulting in a hard shut-
down. Smart power-save prevents this condition. When
the FB voltage exceeds 10% above nominal (exceeds
550mV), the device immediately disables power-save, and
DL drives high to turn on the low-side MOSFET. This draws
current from V
OUT
 through the inductor and causes V
OUT
 to
fall. When V
FB
 drops back to the 500mV trip point, a normal
T
ON
 switching cycle begins. This method prevents a hard
OVP shutdown and also cycles energy from V
OUT
 back to
V
IN
. It also minimizes operating power by avoiding forced
conduction mode operation. Figure 7 shows typical wave-
forms for the Smart Power-save feature.
SmartDrive
TM
For each DH pulse the DH driver initially turns on the high-
side MOSFET at a lower speed, allowing a softer, smooth
turn-off of the low-side diode. Once the diode is off and
the LX voltage has risen 0.5V above PGND, the SmartDrive
circuit automatically drives the high-side MOSFET on at a
rapid rate. This technique reduces switching while main-
taining high efficiency and also avoids the need for snub-
bers or series resistors in the gate drive.
Applications Information (continued)
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