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參數(shù)資料
| 型號(hào)： | SI3446DV |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single N-Channel, 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 6200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 93K |
| 代理商： | SI3446DV |
FDC637AN
SI3446DV Rev. A1
SI3446DV
Single N-Channel, 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor's
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
advanced
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
Applications
DC/DC converter
Load switch
Battery Protection
April 2001
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
SI3446DV
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Power Dissipation for Single Operation
20
±
12
6.2
20
1.6
0.8
V
V
- Continuous
- Pulsed
(Note 1a)
A
P
D
(Note 1a)
W
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.637
Device
FDC637AN
Reel Size
7
’’
Tape Width
8mm
Quantity
3000 units
Features
6.2 A, 20 V. R
DS(on)
= 0.024
@ V
GS
= 4.5 V
R
DS(on)
= 0.032
@ V
GS
= 2.5 V
Fast switching speed.
Low gate charge (10.5nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
5
6
4
1
2
3
D
D
D
S
D
G
SuperSOT -6
TM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3446DV-T1 | 功能描述:MOSFET 20V 5.3A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3446DV-T1-E3 | 功能描述:MOSFET 20V 5.3A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3446DV-T3 | 制造商:Vishay Semiconductors 功能描述: |
| SI3447 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| SI3447BDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
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