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參數資料
| 型號： | SIGC109T120R3L |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT3 Chip |
| 中文描述： | IGBT3芯片 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 80K |
| 代理商： | SIGC109T120R3L |
SIGC109T120R3L
Edited by INFINEON Technologies AI PS DD HV3, L7681B, Edition 2, 04.09.03
IGBT
3
Chip
FEATURES:
1200V Trench + Field Stop technology
120μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4210-A101
SIGC109T120R3L 1200V 100A 10.47 x 10.44 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
10.47 x 10.44
Emitter pad size ( include gate pad )
8.95 x 8.32
Gate pad size
1.14 x 1.14
mm
Area total / active
109.3 / 85.8
mm
2
Thickness
120
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
124 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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PDF描述 |
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| SIGC109T120R3 | IGBT3 Chip |
| SIGC10T60 | IGBT3 Chip |
| SIGC11T60NC | IGBT Chip in NPT-technology |
| SIGC121T120R2CL | IGBT Chip in NPT-technology |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SIGC10T60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC10T60S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient |
| SIGC11T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC11T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T120R2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
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