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參數資料
| 型號： | SIGC10T60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT3 Chip |
| 中文描述： | IGBT3芯片 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 83K |
| 代理商： | SIGC10T60 |
SIGC10T60
Edited by INFINEON Technologies AI PS DD CLS, L7541A, Edition 2, 27.01.2005
IGBT
3
Chip
FEATURES:
600V Trench & Field Stop technology
low V
CE(sat)
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
discrete components
Applications:
drives
white goods
resonant applications
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4283-A101
SIGC10T60
600V
20A
3.19 x 3.21 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
3.19 x 3.21
Emitter pad size
2.004 x 2.413
Gate pad size
0.361 x 0.513
mm
2
Area total / active
10.2 / 7.1
mm
2
Thickness
70
μm
Wafer size
150
mm
Flat position
0
deg
Max. possible chips per wafer
1363 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject ink dot size
0.65mm ; max 1.2mm
Recommended storage environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SIGC10T60S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient |
| SIGC11T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC11T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T120R2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T120R2CL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
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