- 您現在的位置：買賣IC網 > PDF目錄26881 > SLD-68EBG1E PHOTO DIODE PDF資料下載
參數資料
| 型號： | SLD-68EBG1E |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | TO-46, 2 PIN |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 34K |
| 代理商： | SLD-68EBG1E |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68EBG1
Integral Infrared Rejection Filter
Planar Photodiode
Features
Planar Photodiode
Integral IR Rejection Filter
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
TO-46 base with epoxy dome lens
Multiple dark current ranges available
Description
This planar, passivated silicon photodiode is designed
to maximize response in the visible light spectrum of
received energy. This diode incorporates a BG filter
that rejects infrared wavelengths and approximates
the response of the human eye.
Photodiodes may
operate in either photovoltaic or reverse bias mode to
provide low capacitance with fast switching speed. It
provides excellent linearity in output signal versus
light intensity.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (3)
260
°C
Dimensions in mm. (+/- 0.13)
Anode +
Cathode -
(Common to case)
Chip
Epoxy
45°
25.4 Min.
5.3
4.2
2.5
0.50-0.52
Filter
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
3.0
100°
90°
80°
70°
60°
50°
1.0
40°
30°
20°
10°
Half Angle = 40°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
7.5
11.0
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mW/cm
2
(1)
ID
Reverse Dark Current:
SLD-68EBG1A
100
nA
VR=100mV, Ee=0
SLD-68EBG1B
100
nA
VR=5V, Ee=0
SLD-68EBG1C
10
nA
VR=5V, Ee=0
SLD-68EBG1D
1
nA
VR=5V, Ee=0
SLD-68EBG1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
40
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=10V, RL=1k
(2)
tF
Fall Time
1.5
s
VR=10V, RL=1k
(2)
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
550
nm
λ
R
Sensitivity Spectral Range
400
700
nm
θ
1/2
Acceptance Half Angle
40
deg
(off center-line)
Notes: (1) Ee = light source @ 2854
°K
Specifications subject to change without notice
(2) Ee = Light source @
λ = 580 nm
102647 REV 2
(3) >2 mm from case for <5 sec.
相關PDF資料 |
PDF描述 |
|---|---|
| SLD-68HFBG1C | PHOTO DIODE |
| SLD-69C1D | PHOTO DIODE |
| SLD-70C1E | PHOTO DIODE |
| SLD-70C1A | PHOTO DIODE |
| SLD-70IR1D | PHOTO DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SLD-68HF1 | 制造商:SILONEX 制造商全稱:SILONEX 功能描述:Planar Photodiode |
| SLD-68HF1A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode, Planar; 130 muA (Typ.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.) |
| SLD-68HFBG1 | 制造商:SILONEX 制造商全稱:SILONEX 功能描述:Internal Infrared Rejection Filter Planar Photodiode |
| SLD-68HL1 | 制造商:SILONEX 制造商全稱:SILONEX 功能描述:Planar Photodiode |
| SLD-68HL1A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode, Planar; TO-46; 450 muA (Typ.); 0.40 V (Typ.); 100 nA (Max.); -40 de |
發布緊急采購，3分鐘左右您將得到回復。