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參數資料
| 型號： | SLD-68HFBG1C |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | HERMETIC, TO-46, 2 PIN |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | SLD-68HFBG1C |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68HFBG1
Internal Infrared Rejection Filter
Planar Photodiode
Features
Fast switching time, Low capacitance
High responsivity
Linear response vs irradiance
IR Blocking Filter
Hermetic TO-46 case with flat window
Multiple dark current ranges available
Description
This
small
area
planar,
passivated
silicon
photodetector
is
designed
to
operate
in
either
photovoltaic or reverse bias mode. It provides
excellent linearity in output signal versus irradiance
(Ee). Low dark current and low capacitance make it
the ideal detector for fast rise time applications.
Internal blue-green filter blocks infrared radiation.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (1)
260
°C
CATHODE
(Common to case)
Anode
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
25.4 Min.
45°
Dimensions in mm. (+/- 0.13)
4.7
0.5
2.5
5.1
0.8
5.3
0.0
0.2
0.4
0.6
0.8
1.0
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
1.0
0.8
0.6
0.4
120°
Half Angle = 35°
Directional Sensitivity Characteristics
0
20°
40°
60°
80°
100°
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol Parameter
Min
Typ
Max
Units Test Conditions
ISC
Short Circuit Current
6
10
A
VR=0V, Ee=25mW/cm
2 (2)
VOC
Open Circuit Voltage
0.30
V
Ee=25mw/cm
2
(2)
ID
Reverse Dark Current:
SLD-68HFBG1A
100
nA
VR=100mV, Ee=0
SLD-68HFBG1B
100
nA
VR=5V, Ee=0
SLD-68HFBG1C
10
nA
VR=5V, Ee=0
SLD-68HFBG1D
1
nA
VR=5V, Ee=0
SLD-68HFBG1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
40
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=10V, RL=1k
(3)
tF
Fall Time
1.5
s
VR=10V, RL=1k
(3)
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
550
nm
λ
R
Sensitivity Spectral Range
400
700
nm
θ
1/2
Acceptance Half Angle
35
deg
(off center-line)
Specifications subject to change without notice
102539 REV 2
Notes: (1) >2 mm from case for <5 sec.
(2) Ee = light source @ 2854
°K
(3) Ee = light source @
λ = 580 nm
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SLD-68HL1 | 制造商:SILONEX 制造商全稱:SILONEX 功能描述:Planar Photodiode |
| SLD-68HL1A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode, Planar; TO-46; 450 muA (Typ.); 0.40 V (Typ.); 100 nA (Max.); -40 de |
| SLD-68HL1D | 制造商:Advanced Photonix Inc 功能描述:Photodiode, Planar, TO-46, 70 muA (Typ.), 0.40 V (Typ.), 1 nA (Max.), -40 degC |
| SLD-68HL7 | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode, Hermetic Packaging |
| SLD-69C1 | 制造商:SILONEX 制造商全稱:SILONEX 功能描述:Planar Photodiode |
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