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參數(shù)資料
型號: SS9013
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN epitaxial silicon transisitor
中文描述: 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 62K
代理商: SS9013
2000 Fairchild Semiconductor International
Rev. A, February 2000
S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
Base-Emitter On Voltage
h
FE
Classification
Classification
h
FE1
Parameter
Ratings
40
20
5
500
625
150
-55 ~ 150
Units
V
V
V
A
W
°
C
°
C
Test Condition
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=10mA
Min.
40
20
5
Typ.
Max.
Units
V
V
V
nA
nA
100
100
202
DC Current Gain
64
40
120
120
0.16
0.91
0.67
0.6
1.2
0.7
V
V
V
0.6
D
E
F
G
H
64 ~ 91
78 ~ 112
96 ~ 135
112 ~ 166
144 ~ 202
1. Emitter 2. Base 3. Collector
SS9013
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
High total power dissipation. (P
T
=625mW)
High Collector Current. (I
C
=500mA)
Complementary to SS9012
Excellent h
FE
linearity.
TO-92
1
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SS9013D 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1W Output Amplifier of Potable Radios in Class B Push-pull Operation.
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SS9013FBU 功能描述:兩極晶體管 - BJT NPN/40V/500MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
SS9013FTA 功能描述:兩極晶體管 - BJT NPN Epitaxial Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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