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參數資料
| 型號： | STB210NF02T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 120A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 120A條（丁）|對263AB |
| 文件頁數： | 1/14頁 |
| 文件大小： | 194K |
| 代理商： | STB210NF02T4 |
1/14
AUTOMOTIVE SPECIFIC
October 2002
.
STP210NF02
STB210NF02 STB210NF02-1
N-CHANNEL 20V - 0.0026
- 120A D
PAK/I
PAK/TO-220
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0026
I
STANDARD THRESHOLD DRIVE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
” strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STB210NF02/-1
STP210NF02
20 V
20 V
<0.0032
<0.0032
120 A
(**)
120 A
(**)
1
2
3
1
3
123
TO-220
D
PAK
TO-263
I
PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB210NF02
STB210NF02T4
STP210NF02
STB210NF02-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(**)
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limitedby safe operating area.
(**) Current Limited by Package
(1) I
≤
120A, di/dt
≤
250A/
μ
s, V
≤
V
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 14 V
MARKING
B210NF02
B210NF02
P210NF02
B210NF02
PACKAGE
D
2
PAK
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Parameter
Value
20
20
±
20
120
120
480
300
2.0
1
2.3
Unit
V
V
V
A
A
A
W
W/
°
C
V/ns
J
-55 to 175
°
C
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