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參數資料
| 型號： | STB22NE03L |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET |
| 中文描述： | ? -通道30V的- 0.034ohm - 22A條，263 STripFET]功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 49K |
| 代理商： | STB22NE03L |
STB22NE03L
N - CHANNEL 30V - 0.034
- 22A TO-263
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.034
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE AT 100
o
C
I
APPLICATIONORIENTED
CHARACTERIZATION
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
”
strip-based
process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
Feature
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
April 1999
1
3
D
2
PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
V
DGR
30
±
15
22
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
V
A
16
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
88
A
60
W
0.4
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
o
C
(
1
) I
SD
≤
22 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.05
I
D
STB22NE03L
30 V
22 A
1/6
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