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參數資料
| 型號： | STB3NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET |
| 中文描述： | ? - 600V的通道- 3.3ohm - 3A條- D2PAK/I2PAK PowerMESHII MOSFET的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 94K |
| 代理商： | STB3NC60 |
STB3NC60
N - CHANNEL 600V - 3.3
- 3A - D
2
PAK/I
2
PAK
PowerMESH
ΙΙ
MOSFET
ν
TYPICAL R
DS(on)
= 3.3
ν
EXTREMELY HIGH dv/dt CAPABILITY
ν
100% AVALANCHETESTED
ν
VERY LOWINTRINSIC CAPACITANCES
ν
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II
is the evolution of the first
generation of MESH OVERLAY
. The layout
refinements
introduced
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gatecharge and ruggedness.
greatly
improve
the
APPLICATIONS
ν
HIGH CURRENT, HIGH SPEEDSWITCHING
ν
SWITCH MODE POWER SUPPLIES(SMPS)
ν
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIESAND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
February 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
600
Unit
V
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
600
±
30
3
V
V
A
1.9
A
12
A
80
0.64
W
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
-65 to 150
150
(
1
) I
SD
≤
3A, di/dt
≤
100 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 3.6
I
D
STB3NC60
600 V
3 A
123
1
3
I
2
PAK
TO-262
(Suffix”-1”)
D
2
PAK
TO-263
(Suffix ”T4”)
1/9
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STB3NC60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA |
| STB3NC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB |
| STB3NC90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB3NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH⑩III MOSFET |
| STB3NC90Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
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