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參數資料
| 型號： | STD40NE03L |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 30V - 0.012 ohm - 40A TO-252 STripFET POWER MOSFET |
| 中文描述： | ? -通道30V的- 0.012歐姆- 40A至- 252 STripFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 86K |
| 代理商： | STD40NE03L |
STD40NE03L
N - CHANNEL 30V - 0.012
- 40A TO-252
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.012
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE
I
APPLICATIONORIENTED
CHARACTERIZATION
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
30
30
±
20
20**
20**
160
55
0.37
7
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
(**)
Value limitedonly by the package
dv/dt (
1
)
T
stg
T
j
(
1
) I
SD
≤
20A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.016
I
D
STD40NE03L
30 V
40 A
1
3
DPAK
TO-252
(Suffix ”T4”)
1/8
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相關代理商/技術參數 |
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| STD40NF02L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 20V - 0.01 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET |
| STD40NF02LT4 | 功能描述:MOSFET N-Ch 20 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD40NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.012 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET |
| STD40NF03L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
| STD40NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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