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參數資料
| 型號： | STGD3NB60S |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 3A - 600V DPAK Power MESH IGBT |
| 中文描述： | N溝道3A條- 600V的IGBT的DPAK封裝電力網格 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 83K |
| 代理商： | STGD3NB60S |
STGD3NB60S
N-CHANNEL 3A - 600V DPAK
Power MESH
IGBT
PRELIMINARY DATA
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
VERY LOW ON-VOLTAGE DROP (V
cesat
)
I
HIGH CURRENT CAPABILITY
I
OFFLOSSES INCLUDE TAIL CURRENT
I
SURFACE-MOUNTING DPAK (TO-252)
POWERPACKAGEIN TAPE& REEL
(SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequencyapplications (<1kHz).
with
outstanding
APPLICATIONS
I
LIGHT DIMMER
I
STATIC RELAYS
I
MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
600
V
20
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
±
20
6
V
A
I
C
3
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
24
A
40
W
0.32
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
V
CE(sat)
I
C
3 A
STGD3NB60S
600 V
< 1.5 V
June 1999
1
3
DPAK
TO-252
(Suffix ”T4”)
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STGD5NB120SZ-1 | 40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor |
| STGD5NB120SZ | N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT |
| STGD5NB120SZT4 | N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT |
| STGD7NB60FT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:MS-013; Reel Quantity:1500; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA |
| STGD7NB60F | N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGD3NB60SD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
| STGD3NB60SD_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
| STGD3NB60SD-1 | 功能描述:IGBT 晶體管 N Ch 3A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60SDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60ST4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V DPAK Power MESH IGBT |
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