欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): STN2NF06L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET
中文描述: N溝道60V的- 0.1歐姆-甲的SOT - 223 STripFET⑩二功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 290K
代理商: STN2NF06L
1/8
November 2002
.
STN2NF06L
N-CHANNEL 60V - 0.1
- 2A SOT-223
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.1
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
AVALANCHE RUGGED TECHNOLOGY
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
DC MOTOR CONTROL (DISK DRIVES, etc.)
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STN2NF06L
60 V
<0.12
2 A
1
2
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
(1)
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(2)
Peak Diode Recovery voltage slope
E
AS
(3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
Pulse width limited by safe operating area.
(1)
Related to R
thj
-l
(2) I
SD
2A, di/dt
100A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX
(3) Starting T
j
= 25
o
C, I
D
= 2A, V
DD
= 30V
Parameter
Value
60
60
± 16
2
1.2
8
3
8
6
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C
-55 to 150
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STN2NF10 N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET
STN3NE06 N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(N溝道功率MOSFET)
STN3NF06L N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET
STN3NF06 N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET
STN790A MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STN2NF10 功能描述:MOSFET N-Ch 100 Volt 2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STN2NF10_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET
STN3-415 制造商:Carlo Gavazzi 功能描述:
STN3-515 制造商:Carlo Gavazzi 功能描述:
STN3904 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:NPN Silicon Transistor
主站蜘蛛池模板: 新源县| 沙湾县| 上饶市| 永靖县| 桑植县| 聂荣县| 微山县| 盘山县| 仁怀市| 盐池县| 长岭县| 武乡县| 北宁市| 通渭县| 波密县| 平江县| 扎鲁特旗| 西充县| 泌阳县| 乌拉特中旗| 德清县| 旬邑县| 延津县| 高雄市| 奉化市| 弥渡县| 鄂托克旗| 龙州县| 金平| 江西省| 英德市| 香港| 汕尾市| 安康市| 马公市| 治多县| 漾濞| 攀枝花市| 太白县| 通山县| 清新县|