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參數(shù)資料
| 型號： | STP4N100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
| 中文描述： | N溝道增強模式功率MOS晶體管（不適用溝道增強模式功率MOSFET的） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 202K |
| 代理商： | STP4N100 |
STP4N100
STP4N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 3.1
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INPUT CAPACITANCE
I
LOW GATE CHARGE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
CONSUMER AND INDUSTRIAL LIGHTING
I
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 3.5
< 3.5
I
D
STP4N100
STP4N100FI
1000 V
1000 V
4 A
2.2 A
1
2
3
TO-220
ISOWATT220
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP4N100
STP4N100FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
1000
V
V
DGR
1000
V
V
GS
±
20
V
I
D
4
2.2
A
I
D
2.5
1.4
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
16
16
A
125
40
W
Derating Factor
1
0.32
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
1/10
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| STP4NB100FP | N-Channel 1000V-4Ω-3.8A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
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| STP4NB30 | N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB30FP | N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB50FP | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP4N100FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP4N100XI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2A I(D) | SOT-186VAR |
| STP4N150 | 功能描述:MOSFET PowerMESH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4N150_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 1500V - 5ヘ - 4A - TO-220/TO-247 Very high PowerMESH⑩ Power MOSFET |
| STP4N20 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 200V 4A 3PIN TO-220 - Rail/Tube |
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