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參數資料
| 型號： | STP60NF06FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道60V的- 0.014ohm - 60A章TO-220/TO-220FP STripFET⑩功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 108K |
| 代理商： | STP60NF06FP |
STP60NE10
STP60NE10FP
N - CHANNEL 100V - 0.016
- 60A TO-220/TO-220FP
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.016
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process.The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP60NE10
STP60NE10FP
100
100
±
20
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
V
V
V
A
A
A
W
60
42
240
160
1.06
30
21
120
50
0.37
2000
W/
o
C
V
V/ns
o
C
o
C
V
ISO
dv/dt
T
stg
T
j
7
-65 to 175
175
(
1
) I
SD
≤
60 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.022
< 0.022
I
D
STP60NE10
STP60NE10FP
100 V
100 V
60 A
30 A
May 1999
TO-220
TO-220FP
1
2
3
1
2
3
1/9
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STP60NF06L | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP60NF06LFP | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP60NF10 | 功能描述:MOSFET N-Ch 100 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP60NH2LL | 功能描述:MOSFET N-CH 24V 40A TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:STripFET™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| STP60NS04Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET |
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