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參數資料
| 型號： | STP62NS04Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET |
| 中文描述： | N通道鉗位1250萬- 62A條至220充分保護MOSFET的網格密胺 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 249K |
| 代理商： | STP62NS04Z |
1/8
March 2004
.
STP62NS04Z
N-CHANNEL CLAMPED 12.5m
- 62A TO-220
FULLY PROTECTED MESH OVERLAY MOSFET
INTERNAL SCHEMATIC DIAGRAM
■
TYPICAL R
DS
(on) = 0.0125
■
100% AVALANCHE TESTED
■
LOW CAPACITANCE AND GATE CHARGE
■
175
o
C MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using the latest
advanced Company’s Mesh Overlay process which is
based on a novel strip layout.
The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions
such as those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
APPLICATIONS
■
ABS, SOLENOID DRIVERS
■
POWER TOOLS
Ordering Information
SALES TYPE
STP62NS04Z
TYPE
V
DSS
R
DS(on)
I
D
STP62NS04Z
CLAMPED
<0.015
62 A
MARKING
P62NS04Z
PACKAGE
TO-220
PACKAGING
TUBE
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DG
Drain-gate Voltage
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DG
Drain Gate Current (continuous)
I
GS
Gate SourceCurrent (continuous)
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
V
ESD
ESD (HBM - C = 100pF, R=1.5 k
)
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
40A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 20A, V
DD
= 20V
Parameter
Value
CLAMPED
CLAMPED
CLAMPED
62
37.5
± 50
± 50
248
110
0.74
8
500
8
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
V/ns
mJ
kV
-55 to 175
°C
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