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參數資料
| 型號： | STW10NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 0.6ohm - 10A條- TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/9頁 |
| 文件大小： | 337K |
| 代理商： | STW10NC60 |
1/9
February 2002
STW10NC60
STH10NC60FI
N-CHANNEL 600V - 0.6
- 10A - TO-247/ISOWATT218
PowerMeshII MOSFET
(1)I
SD
≤
10A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*) Limited only by Maximum Temperature Allowed
I
TYPICAL R
DS
(on) = 0.6
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STW10NC60
STH10NC60FI
600 V
600 V
< 0.75
< 0.75
10 A
10 A (*)
Parameter
Value
Unit
STW10NC60
STH10NC60FI
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
±30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
10
10 (*)
A
6.3
6.3 (*)
A
Drain Current (pulsed)
40
40 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
160
60
W
1.28
0.48
W/°C
V/ns
dv/dt
V
ISO
T
stg
T
j
3.5
Insulation Withstand Voltage (DC)
-
2500
V
Storage Temperature
– 55 to 150
°C
Max. Operating Junction Temperature
TO-247
ISOWATT218
1
2
3
1
2
3
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STW10NC60 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
| STW10NC70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| STW10NK60Z | 功能描述:MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW10NK80Z | 功能描述:MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW10NK80Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
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