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參數(shù)資料
| 型號： | TIM1011-4L |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 156K |
| 代理商： | TIM1011-4L |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1011-4L
TECHNICAL DATA
FEAT URES
HIGH POWER
P1dB=36.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN
G1dB=7.5dB at 10.7GHz to 11.7GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
I
DS1
Gain Flatness
Δ
G
Power Added Efficiency
η
add
3
rd
Order Intermodulation
Distortion
Drain Current
IDS2
Channel Temperature Rise
Δ
Tch
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
CONDITIONS
UNIT
dBm
MIN. TYP.
35.5
MAX.
P
1dB
36.5
G
1dB
dB
6.5
7.5
A
dB
%
dBc
-42
1.7
24
-45
2.2
±
0.8
VDS= 9V
f= 10.7 to 11.7GHz
IM3
Two-Tone Test
Po=25.0 dBm
(Single Carrier Level)
A
°
C
1.7
2.2
70
(VDS x IDS + Pin – P1dB)
x Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
Transconductance
CONDITIONS
V
DS
=
3V
I
DS
= 2.0A
V
GSoff
V
DS
=
3V
I
DS
= 60mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -60
μ
A
UNIT
mS
MIN.
TYP.
1200
MAX.
gm
Pinch-off Voltage
V
-2.0
-3.5
-5.0
Saturated Drain Current
A
4.0
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
2.9
3.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006
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