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| 型號(hào)： | TPS65167RHAT |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類(lèi)： | 穩(wěn)壓器 |
| 英文描述： | 4.9 A SWITCHING REGULATOR, 900 kHz SWITCHING FREQ-MAX, PQCC40 |
| 封裝： | 6 X 6 MM, GREEN, PLASTIC, MO-220VJJD-2, QFN-40 |
| 文件頁(yè)數(shù)： | 23/41頁(yè) |
| 文件大?。?/td> | 1270K |
| 代理商： | TPS65167RHAT |
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ELECTRICAL CHARACTERISTICS
SLVS760C – APRIL 2007 – REVISED MARCH 2008
AVIN=VINB=SUPN=12V, EN=REGOUT, Vs = 15V, Vlogic = 3.3V , Vaux = 1.8V, TA = –40°C to 85°C, typical values are at
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
Input voltage range
6
14
V
Quiescent current into AVIN
Not switching, FB = FB + 5%
1.5
mA
IQ
Quiescent current into VINB
Not switching, FBB = FBB + 5%
0.15
mA
Quiescent current into SUP
Not switching, FB = FBB = FBN = FBP = + 5%
275
A
Undervoltage lockout threshold
VI falling
4.7
5.2
5.7
V
UVLO
Undervoltage lockout threshold
VI rising
4.9
5.45
5.9
V
Thermal shutdown
155
°C
Thermal shutdown hysteresis
5
°C
REFERENCE VOLTAGE REF
Vref
Reference voltage
VI = 6 V to 14 V, Iref = 10 A
1.205
1.213
1.219
V
LOGIC SIGNALS CTRL, HVS
VIH
High level input voltage
6 V
≤ VIN ≤ 14 V
1.4
V
VIL
Low level input voltage
6 V
≤ VIN ≤ 14 V
0.4
V
Ilkg
Input leakage current
EN = CTRL = HVS = GND or 6 V
0.01
0.1
A
SEQUENCING GDLY/EN
EN/GDLY Charge current
V(threshold) = 1.213 V
3.6
4.8
6.2
A
EN/GDLY threshold
1.23
V
EN/GDLY pulldown resistor
4.5
k
SWITCHING FREQUENCY
fs
Switching frequency
600
750
900
kHz
REGULATOR REGOUT
VO
Regulator output voltage
Ireg = 1 mA
4.6
4.8
5
V
BOOST CONVERTER (Vs)
VO
Output voltage range
19
V
VFB
Feedback regulation voltage
1.136
1.146
1.154
V
IFB
Feedback input bias current
10
100
nA
N-MOSFET on-resistance (Q1)
I(SW) = 500 mA
160
270
m
RDS(on)
P-MOSFET on-resistance (Q2)
I(SW) = 200 mA
14
20
IMAX
Maximum P-MOSFET peak switch current
1
A
ILIM
N-MOSFET switch current limit (Q1)
3.5
4.2
4.9
A
Ilkg
Switch leakage current
V(SW) = 15 V
1
10
A
Line Regulation
6 V
≤ Vin ≤ 14 V, IO = 2 mA
0.006
%/V
Load Regulation
2 mA
≤ Iout ≤ 1.8 A
0.06
%/A
BOOST CONVERTER (Vs) OVERVOLTAGE PROTECTION
Switch overvoltage protection
Vs rising
19.5
20.2
21
V
Switch overvoltage protection hysteresis
0.6
V
GATE DRIVE (GD) AND BOOST CONVERTER PROTECTION
I(GD)
Gate drive sink current
EN = high
9
A
R(GD)
Gate drive internal pull up resistance
5
k
ton
Gate on time during short-circuit
Vs < 4.8 V
1
ms
toff
Gate off time during short-circuit
Vs < 4.8 V
60
ms
TEMPERATURE SENSOR (TEMP)
VO
Output voltage range
1.2
2.5
V
Drive current
200
A
TA = 85°C, I = 200 A, device not switching,
VO
Output voltage at TA = 85°C
2.037
V
FB = FBnominal + 5%
Temperature accuracy
–6
6
°C
Temperature coefficient
5.7
mV/
°C
Copyright 2007–2008, Texas Instruments Incorporated
3
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