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參數資料
| 型號： | W24LH8S-55LE |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| 中文描述： | 32K X 8 STANDARD SRAM, 100 ns, PDSO28 |
| 封裝： | 0.330 INCH, SOP-28 |
| 文件頁數： | 10/10頁 |
| 文件大小： | 198K |
| 代理商： | W24LH8S-55LE |
W24LH8
- 10 -
VERSION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A1
Nov. 1998
-
Initial Issued
A2
Jan. 1999
1
Change low power consumption active: from 108 to 156 mW
(max.)
3
Change operating power supply current (I
DD
) from 30 to 40 mA
(max.)
A3
Mar. 2001
1
Change operating power supply voltage from (2.7V to 3.6V) to
(2.7V to 5.5V), access time from 70 nS to (55 nS (5V
±
10%),
100 nS (3V
±
10%)), and remove 28-pin 600 mil DIP package.
Change operating power supply current (I
DD
) from 40 mA to
(70 mA/5V, 40 mA/3V)(max.)
3
4
Add 55 nS (5V
±
10%) spec. and change 3V
±
10% spec. from
70 nS to 100 nS.
2, 4, 7, 8 Delete SL grade
8
Correct Ordering Information
Voice & Fax-on-demand: 886-2-27197006
FAX: 886-2-27197502
FAX: 852-27552064
FAX: 408-5441798
Note: All data and specifications are subject to change withou t notice.
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5792766
http://www.winbond.com.tw/
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-27190505
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd;
Kowloon, Hong Kong
TEL: 852-27513100
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
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