- 您現在的位置：買賣IC網 > PDF目錄363874 > W24LH8S-55LE (WINBOND ELECTRONICS CORP) Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits PDF資料下載
參數資料
| 型號： | W24LH8S-55LE |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| 中文描述： | 32K X 8 STANDARD SRAM, 100 ns, PDSO28 |
| 封裝： | 0.330 INCH, SOP-28 |
| 文件頁數： | 4/10頁 |
| 文件大小： | 198K |
| 代理商： | W24LH8S-55LE |
W24LH8
- 4 -
AC Characteristics, continued
(V
SS
= 0V; T
A
(
°
C) = -20 to 85 for LE; -40 to 85 for LI)
Read Cycle
PARAMETER
SYMBOL
3V
±
10%
5V
±
10%
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
T
RC
100
-
55
-
nS
Address Access Time
T
AA
-
100
-
55
nS
Chip Select Access Time
T
ACS
-
100
-
55
nS
Output Enable to Output Valid
T
AOE
-
50
-
30
nS
Chip Selection to Output in Low Z
T
CLZ
*
15
-
10
-
nS
Output Enable to Output in Low Z
T
OLZ
*
5
-
5
-
nS
Chip Deselection to Output in High Z
T
CHZ
*
-
35
-
20
nS
Output Disable to Output in High Z
T
OHZ
*
-
35
-
20
nS
Output Hold from Address Change
T
OH
15
-
10
-
nS
These parameters are sampled but not 100% tested
Write Cycle
PARAMETER
SYMBOL
3V
±
10%
5V
±
10%
UNIT
MIN.
MAX.
MIN.
MAX.
Write Cycle Time
T
WC
100
-
55
-
nS
Chip Selection to End of Write
T
CW
80
-
40
-
nS
Address Valid to End of Write
T
AW
80
-
40
-
nS
Address Setup Time
T
AS
0
-
0
-
nS
Write Pulse Width
T
WP
70
-
30
-
nS
Write Recovery Time
#CS, #WE
T
WR
0
-
0
-
nS
Data Valid to End of Write
T
DW
40
-
25
-
nS
Data Hold from End of Write
T
DH
0
-
0
-
nS
Write to Output in High Z
T
WHZ
*
-
35
-
20
nS
Output Disable to Output in High Z
T
OHZ
*
-
35
-
20
nS
Output Active from End of Write
T
OW
5
-
5
-
nS
These parameters are sampled but not 100% tested
相關PDF資料 |
PDF描述 |
|---|---|
| W24LH8S-55LI | Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| W24V04 | 512K×8bit CMOS Static RAM(512K×8位CMOS靜態RAM) |
| W256 | 12 Output Buffer for 2 DDR and 3 SRAM DIMMS |
| W256H | 12 Output Buffer for 2 DDR and 3 SRAM DIMMS |
| W256HT | 12 Output Buffer for 2 DDR and 3 SRAM DIMMS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W24LH8S-55LI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
| W24P-U | 功能描述:2.4GHz WLAN PCB Trace RF Antenna 3.2dBi Connector, U.FL Surface Mount 制造商:inventek systems 系列:eS-WiFi? 包裝:散裝 零件狀態:有效 頻率組:UHF（2 GHz ~ 3 GHz） 頻率（中心/帶）:2.4GHz 頻率范圍:- 天線類型:PCB 印制線 頻帶數:1 VSWR:- 回波損耗:- 增益:3.2dBi 功率 - 最大值:- 特性:- 端接:連接器，U.FL 侵入防護:- 安裝類型:表面貼裝 高度（最大值）:0.098"（2.50mm） 應用:WLAN 標準包裝:100 |
| W24R200JB | 功能描述:線繞電阻器 - 透孔 .2ohm 14watt 5% RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數:200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產品:Power Resistors Wirewound High Energy |
| W24R200JBLF | 功能描述:線繞電阻器 - 透孔 .2ohm 14watt 5% RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數:200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產品:Power Resistors Wirewound High Energy |
| W24R470JB | 功能描述:線繞電阻器 - 透孔 .47ohm 14watt 5% RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數:200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產品:Power Resistors Wirewound High Energy |
發布緊急采購，3分鐘左右您將得到回復。