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參數(shù)資料
| 型號(hào)： | W26L010A-12 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K X 16 High Speed CMOS Static RAM |
| 中文描述： | 64K的× 16高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | W26L010A-12 |
W26L010A
- 4 -
AC Test Loads and Waveform
R1 320 ohm
3.3V
OUTPUT
R2
350 ohm
5 pF
R2
350 ohm
R1 320 ohm
3.3V
OUTPUT
30 pF
Including
Jig and
Scope
90%
90%
2 nS
10%
2 nS
10%
3.0V
0V
Including
Jig and
Scope
)
( For T
T
T
OLZ,
T
T
WHZ,
T
OW
T
CLZ,
BLZ,
CHZ,
BHZ,
T
OHZ,
(V
DD
= 3.3V
±
5%, V
SS
= 0V, T
A
= 0 to 70
°
C)
(1) Read Cycle
PARAMETER
SYM.
W26L010A-10
W26L010A-12
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
T
RC
10
-
12
-
nS
Address Access Time
T
AA
10
12
nS
Chip Select Access Time
T
ACS
10
12
nS
Output Enable to Output Valid
T
OE
5
6
nS
UB, LB Access Time
T
BA
5
6
nS
Output Hold from Address Change
T
OH
3
5
3
6
nS
Chip Select to Output in Low Z
T
CLZ*
3
3
nS
Chip Deselect to Output in High Z
T
CHZ*
0
0
nS
Output Enable to Output in Low Z
T
OLZ*
5
6
nS
Output Disable to Output in High Z
T
OHZ
*
T
BLZ*
0
0
nS
UB, LB Select to Output in Low Z
nS
UB
,
LB
Deselect to Output in High Z
T
BHZ*
5
6
nS
These parameters are sampled but not 100% tested.
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| W26L010AJ-12 | 64K X 16 High Speed CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W26L010AJ-10 | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:64K X 16 High Speed CMOS Static RAM |
| W26L010AJ-12 | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:64K X 16 High Speed CMOS Static RAM |
| W26L010AT-10 | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:64K X 16 High Speed CMOS Static RAM |
| W26L010AT-12 | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:64K X 16 High Speed CMOS Static RAM |
| W26NM50 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 500V - 0.10ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET |
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