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參數資料
型號: W29F102Q-55B
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 64K 16 CMOS FLASH MEMORY
中文描述: 64K X 16 FLASH 5V PROM, 55 ns, PDSO40
封裝: 10 X 14 MM, TSOP-40
文件頁數: 1/21頁
文件大小: 210K
代理商: W29F102Q-55B
W29F102
64K
×
16 CMOS FLASH MEMORY
Publication Release Date: June 1999
- 1 -
Revision A4
GENERAL DESCRIPTION
The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K
×
16 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W29F102 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read
5-volt Erase
5-volt Program
Fast Program operation:
Word-by-Word programming: 50
μ
S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 45/50/55/70 nS
Endurance: 1K/10K cycles (typ.)
Ten-year data retention
Hardware data protection
8K word Boot Block with Lockout protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin TSOP and 44-pin
PLCC
相關PDF資料
PDF描述
W29F102Q-70 64K 16 CMOS FLASH MEMORY
W29F102Q-70B 64K 16 CMOS FLASH MEMORY
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相關代理商/技術參數
參數描述
W29F102Q-70 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K 16 CMOS FLASH MEMORY
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