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參數資料
| 型號： | XN4504 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 500 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 89K |
| 代理商： | XN4504 |
1
Publication date: February 2004
SJJ00078BED
Composite Transistors
XN04504
(XN4504)
Silicon NPN epitaxial planar type
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: R
on
test circuit
For amplification of low-frequency output
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SD1328
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: 5X
Tr2
Tr1
5
4
3
2
1
6
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
0.1
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
C
12
V
Collector current
0.5
A
Peak collector current
I
CP
1
A
Total power dissipation
P
T
T
j
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1
mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.5 A, I
B
=
2
0 mA
I
C
=
0.5 A, I
B
=
5
0 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
25
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
20
V
Emitter-base voltage (Collector open)
12
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
I
CBO
100
nA
h
FE1
h
FE2
200
800
60
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
V
CE(sat)
0.13
0.40
V
V
BE(sat)
f
T
C
ob
1.2
V
Transition frequency
200
MHz
Collector output capacitance
(Common base, input open circuited)
ON resistance
*2
10
pF
R
on
1.0
V
V
1 k
on
=
V
B
×
1
000
R
A
V
B
(
)
f
=
1 kHz
V
=
0.3 V
V
B
I
B
=
1 mA
V
A
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| XN4509 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN4556 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:NPN epitaxial planer transistor |
| XN4601 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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