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參數資料
| 型號： | 48SD6404RPFK |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | DRAM |
| 英文描述： | 256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 中文描述： | 64M X 4 SYNCHRONOUS DRAM, 6 ns, DFP72 |
| 封裝： | DFP-72 |
| 文件頁數： | 20/42頁 |
| 文件大小： | 596K |
| 代理商： | 48SD6404RPFK |
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48SD6404
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All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM
01.11.05 Rev 2
Read command to Write command Interval:
1. Same bank, same ROW address: When the write command is executed at the same ROW address of
the same bank as the preceding read command, the write command can be performed after an interval of no
less than 1 clock. However, DQM must be set High so the output buffer becomes High-Z before data input.
READ to WRITE Command Interval (1)
READ to WRITE Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no
less than 1 cycle, provided that the other bank is in the bank-active state. However, DQM must be set High
so that the output buffer becomes High-Z before data input.
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