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參數(shù)資料
| 型號(hào)： | 48SD6404RPFK |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | DRAM |
| 英文描述： | 256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 中文描述： | 64M X 4 SYNCHRONOUS DRAM, 6 ns, DFP72 |
| 封裝： | DFP-72 |
| 文件頁(yè)數(shù)： | 6/42頁(yè) |
| 文件大?。?/td> | 596K |
| 代理商： | 48SD6404RPFK |
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48SD6404
M
em
o
ry
14
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM
01.11.05 Rev 2
READ
H
x
DESL
Continue burst to end
L
H
x
NOP
Continue burst to end
L
H
L
H
BA, CA, A10
READ/READ A
Continue burst read to CAS
latency and new read
L
H
L
BA, CA, A10
WRIT/WRIT A
Term burst read/start write
L
H
BA, RA
ACTV
Other bank active
ILLEGAL on same bank4
L
H
L
BA, A10
PRE, PALL
Term burst read and
Precharge
L
H
x
REF, SELF
ILLEGAL
L
MODE
MRS
ILLEGAL
Read with auto-
precharge
H
x
DESL
Continue burst to end and pre-
charge
L
H
x
NOP
Continue burst to end and pre-
charge
L
H
L
H
BA, CA, A10
READ/READ A
ILLEGAL1
L
H
L
BA, CA, A10
WRIT/WRIT A
ILLEGAL1
L
H
BA, RA
ACTV
Other bank active
ILLEGAL on same bank4
L
H
L
BA, A10
PRE, PALL
ILLEGAL1
L
H
x
REF, SELF
ILLEGAL
L
MODE
MRS
ILLEGAL
Write
H
x
DESL
Continue burst to end
L
H
x
NOP
Continue burst to end
L
H
L
H
BA, CA, A10
READ/READ A
Term burst and new read
L
H
L
BA, CA, A10
WRIT/WRIT A
Term burst and new write
L
H
BA, RA
ACTV
Other bank active
ILLEGAL on same bank4
L
H
L
BA, A10
PRE, PALL
Term burst write and
precharge5
L
H
x
REF, SELF
ILLEGAL
L
MODE
MRS
ILLEGAL
CURRENT STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
OPERATION
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