
REV. 0
–4–
ADF4251
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADF4251 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
PIN CONFIGURATION
PIN 1
INDICATOR
TOP VIEW
(Not to Scale)
18 CP
GND
2
17 DV
DD
16 IF
IN
A
15 IF
IN
B
14 A
GND
2
13 R
SET
CP
RF
1
CP
GND
1 2
RF
IN
A 3
RF
IN
B 4
A
GND
1 5
MUXOUT 6
2
P
1
R
I
C
D
G
C
D
L
2
D
1
2
D
3
2
D
2
2
P
2
1
I
ADF4251
ORDERING GUIDE
Model
Temperature Range
Package Option
*
ADF4251BCP
ADF4251BCP-REEL
ADF4251BCP-REEL7
–40oC to +85oC
–40oC to +85oC
–40oC to +85oC
CP-24
CP-24
CP-24
*
CP = Lead Frame Chip Scale Package
ABSOLUTE MAXIMUM RATINGS
1, 2
(T
A
= 25°C, unless otherwise noted.)
V
DD
1, V
DD
2, V
DD
3, DV
DD
to GND
3
. . . . . . . . –0.3 V to +4 V
REF
IN
, RF
IN
A, RF
IN
B to GND . . . . . . –0.3 V to V
DD
+ 0.3 V
V
P
1, V
P
2 to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
V
P
1, V
P
2 to V
DD
1 . . . . . . . . . . . . . . . . . . . . . –3.3 V to +3.5 V
Digital I/O Voltage to GND . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 150°C
LFCSP
JA
Thermal Impedance . . . . . . . . . . . . . . . . 122°C/W
Soldering Reflow Temperature
Vapor Phase (60 sec max) . . . . . . . . . . . . . . . . . . . . . 240°C
IR Reflow (20 sec max) . . . . . . . . . . . . . . . . . . . . . . . 240°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
This device is a high performance RF integrated circuit with an ESD rating
of <2 k
W
, and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3
GND = CP
GND
1, A
GND
1, D
GND
, A
GND
2, and CP
GND
2.