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參數資料
| 型號： | ADG636 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch |
| 中文描述： | 1件電荷注入，100功率放大器泄漏CMOS 5伏/ 5伏/ 3伏雙路SPDT開關 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 147K |
| 代理商： | ADG636 |
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Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
ADG636
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
www.analog.com
Analog Devices, Inc., 2002
1 pC Charge Injection, 100 pA Leakage
CMOS 5 V/+5 V/+3 V Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A
D1
6
D2
9
S2B
S2A
S1B
EN
A1
A0
14
1
2
4
5
11
10
LOGIC
FEATURES
1 pC Charge Injection
2.7 V to 5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: –40 C to +125 C
100 pA (Max @ 25 C) Leakage Currents
85
Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two independently
selectable CMOS SPDT (Single Pole, Double Throw) switches.
When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual
±
2.7 V to
±
5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of
±
1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25
°
C.
It offers on-resistance of 85
typ, which is matched to within
2
between channels. The ADG636 also has low power dissi-
pation yet gives high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1. Ultralow Charge Injection (Q
INJ
:
±
1.5 pC typ over full
signal range)
2. Leakage Current <0.25 nA max @ 85
°
C
3. Dual
±
2.7 V to
±
5 V or Single
+2.7 V to +5.5 V Supply
4. Automotive Temperature Range:
–
40
°
C to +125
°
C
5. Small 14-Lead TSSOP Package
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PDF描述 |
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| ADG636YRU | 1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ADG636YRU | 功能描述:IC SWITCH DUAL SPDT 14TSSOP RoHS:否 類別:集成電路 (IC) >> 接口 - 模擬開關，多路復用器，多路分解器 系列:- 標準包裝:48 系列:- 功能:開關 電路:4 x SPST - NO 導通狀態電阻:100 歐姆 電壓電源:單/雙電源 電壓 - 電源，單路/雙路(±):2 V ~ 12 V，±2 V ~ 6 V 電流 - 電源:50nA 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:16-SOIC 包裝:管件 |
| ADG636YRU-REEL | 功能描述:IC SWITCH DUAL SPDT 14TSSOP RoHS:否 類別:集成電路 (IC) >> 接口 - 模擬開關，多路復用器，多路分解器 系列:- 標準包裝:1,000 系列:- 功能:多路復用器 電路:1 x 4:1 導通狀態電阻:- 電壓電源:雙電源 電壓 - 電源，單路/雙路(±):±5V 電流 - 電源:7mA 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:16-SOIC 包裝:帶卷 (TR) |
| ADG636YRU-REEL7 | 制造商:Analog Devices 功能描述:Analog Switch Dual SPDT 14-Pin TSSOP T/R 制造商:Analog Devices 功能描述:ANLG SW DUAL SPDT 5.5V/5.5V 14TSSOP - Tape and Reel |
| ADG636YRUZ | 功能描述:IC SWITCH DUAL SPDT 14TSSOP RoHS:是 類別:集成電路 (IC) >> 接口 - 模擬開關，多路復用器，多路分解器 系列:- 特色產品:MicroPak? 標準包裝:1 系列:- 功能:開關 電路:2 x SPST - NC 導通狀態電阻:500 毫歐 電壓電源:單電源 電壓 - 電源，單路/雙路(±):1.4 V ~ 4.3 V 電流 - 電源:150nA 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-XFDFN 供應商設備封裝:8-XSON，SOT833-1 （1.95x1） 包裝:Digi-Reel® 其它名稱:568-5557-6 |
| ADG636YRUZ | 制造商:Analog Devices 功能描述:IC DUAL SPDT SWITCH |
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