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參數資料
| 型號： | APT25GP90BDQ1G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 72 A, 900 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數： | 3/9頁 |
| 文件大小： | 442K |
| 代理商： | APT25GP90BDQ1G |
050-7476
Rev
A
11-2005
APT25GP90BDQ1(G)
TYPICAL PERFORMANCE CURVES
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
V
CE = 720V
IC = 25A
TJ = 25°C
250s PULSE
TEST<0.5 % DUTY
CYCLE
100
80
60
40
20
0
120
100
80
60
40
20
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
2
4
6
8
10
0
20
40
60
80
100
120
6
8
10
12
14
16
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
4
3.5
3
2.5
2
1.5
1
0.5
0
100
80
60
40
20
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 50A
I
C = 25A
I
C = 12.5A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 50A
I
C = 25A
I
C = 12.5A
T
J = 125°C
T
J = 25°C
T
J = -55°C
VGE = 15V
T
J = 125°C
T
J = 25°C
T
J = -55°C
V
CE = 450V
V
CE = 180V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT25GP90BG | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GR120B | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT25GR120BD15 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 75A 521W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT25GR120BSCD10 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 75A 521W TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE TRANSISTOR 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE POWER TRANSISTORS/MODULES |
| APT25GR120S | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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