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參數資料
| 型號： | APT25GP90BDQ1G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 72 A, 900 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數： | 9/9頁 |
| 文件大小： | 442K |
| 代理商： | APT25GP90BDQ1G |
050-7476
Rev
A
11-2005
APT25GP90BDQ1(G)
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
APT10035LLL
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT25GP90BG | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GR120B | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT25GR120BD15 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 75A 521W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT25GR120BSCD10 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 75A 521W TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE TRANSISTOR 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE POWER TRANSISTORS/MODULES |
| APT25GR120S | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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