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參數資料
| 型號： | APT60GF120JRD |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 115 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 7/9頁 |
| 文件大小： | 124K |
| 代理商： | APT60GF120JRD |
052-6259
Rev
B
8-2002
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 80°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 60A
Maximum Forward Voltage
I
F
= 120A
I
F
= 60A, T
J
= 150°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
2.0
APT60GF120JRD
60
100
540
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
APT60GF120JRD
MIN
TYP
MAX
70
85
70
130
170
18
30
29
40
630
1820
12
900
600
UNIT
ns
Amps
nC
Volts
A/s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt = -15A/s, V
R
= 30V, T
J
= 25°C
Reverse Recovery Time
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 650V
T
J
= 100°C
Forward Recovery Time
T
J
= 25°C
I
F
= 60A, di
F
/dt = 480A/s, V
R
= 650V
T
J
= 100°C
Reverse Recovery Current
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 650V
T
J
= 100°C
Recovery Charge
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 650V
T
J
= 100°C
Forward Recovery Voltage
T
J
= 25°C
I
F
= 60A, di
F
/dt = 480A/s, V
R
= 650V
T
J
= 100°C
Rate of Fall of Recovery Current
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 650V (See Figure 33)
T
J
= 100°C
DYNAMIC CHARACTERISTICS
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.45
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
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| APT60GF120JRDQ3 | 功能描述:IGBT 1200V 149A 625W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT60GF60JU2 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT60GF60JU3 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT60GL120JU2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP? Boost chopper Trench + Field Stop IGBT4 Power module |
| APT60GL120JU2_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP?? Boost chopper Trench Field Stop IGBT4 Power module |
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