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參數資料
| 型號： | APTC60AM70T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 322K |
| 代理商： | APTC60AM70T1G |
APTC60AM70T1G
APT
C
60AM70T1G
–
Re
v0
A
ugus
t,200
7
www.microsemi.com
1 – 6
1
8
7
Q1
Q2
56
3
4
11
NTC
12
9
10
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
39
ID
Continuous Drain Current
Tc = 80°C
29
IDM
Pulsed Drain current
160
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
70
m
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 70m max @ Tj = 25°C
ID = 39A @ Tc = 25°C
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| APTC60AM83B1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60AM83BC1G | 功能描述:MOSFET 3N-CH 600V 36A SP1 制造商:microsemi corporation 系列:CoolMOS?? 包裝:托盤 零件狀態:停產 FET 類型:3 N 溝道（相角 + 升壓斬波電路） FET 功能:超級結 漏源電壓（Vdss）:600V 電流 - 連續漏極（Id）（25°C 時）:36A 不同?Id，Vgs 時的?Rds On（最大值）:83 毫歐 @ 24.5A、 10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 3mA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:250nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:7200pF @ 25V 功率 - 最大值:250W 工作溫度:-40°C ~ 150°C（TJ） 安裝類型:底座安裝 封裝/外殼:SP1 供應商器件封裝:SP1 標準包裝:1 |
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| APTC60DAM24CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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