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參數資料
| 型號： | APTC60AM70T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 322K |
| 代理商： | APTC60AM70T1G |
APTC60AM70T1G
APT
C
60AM70T1G
–
Re
v0
A
ugus
t,200
7
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 39A
70
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.7mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7
Coss
Output Capacitance
2.56
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.21
nF
Qg
Total gate Charge
259
Qgs
Gate – Source Charge
29
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
111
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5
84
ns
Eon
Turn-on Switching Energy
670
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
980
J
Eon
Turn-on Switching Energy
1096
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
1206
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
39
IS
Continuous Source current
(Body diode)
Tc = 80°C
29
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 39A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
580
ns
Qrr
Reverse Recovery Charge
IS = - 39A
VR = 350V
diS/dt = 100A/s
Tj = 25°C
23
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 39A
di/dt
≤ 100A/s
VR ≤ VDSS
Tj ≤ 150°C
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