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參數(shù)資料
| 型號(hào)： | APTGF165A60D1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 230 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT PACKAGE-7 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 178K |
| 代理商： | APTGF165A60D1G |
APTGF165A60D1G
APT
G
F165A60D1G
–
Rev
2
Decem
ber
,2009
www.microsemi.com
2- 4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
A
Tj = 25°C
1.95
2.45
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 200A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 4 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
9000
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
800
pF
QG
Gate charge
VGE=15V, IC=200A
VCE=300V
650
nC
Td(on)
Turn-on Delay Time
150
Tr
Rise Time
72
Td(off)
Turn-off Delay Time
530
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω
40
ns
Td(on)
Turn-on Delay Time
160
Tr
Rise Time
75
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω
50
ns
Eon
Turn on energy
Tj = 125°C
9
Eoff
Turn off energy
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω
Tj = 125°C
8.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 10s ; Tj = 125°C
900
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
200
A
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 125°C
1.2
V
Tj = 25°C
150
trr
Reverse Recovery time
Tj = 125°C
250
ns
Tj = 25°C
13
Qrr
Reverse Recovery Charge
Tj = 125°C
20
C
Tj = 25°C
2.9
Err
Reverse Recovery Energy
IF = 200A
VR = 300V
di/dt =3500A/s
Tj = 125°C
5.7
mJ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF165DA60D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
| APTGF165DA60D1G | 功能描述:IGBT 600V 230A 730W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF165SK60D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module |
| APTGF165SK60D1G | 功能描述:IGBT 600V 230A 730W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF180A60D3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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