欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDC5612
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 60V N-Channel PowerTrenchTM MOSFET
中文描述: 4300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, SUPERSOT-6
文件頁數: 6/8頁
文件大小: 244K
代理商: FDC5612
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
8mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
13.00
0.059
1.5
512 +0.020/-0.008
0.795
4.00
0.331 +0.059/-0.000
0.567
0.311 – 0.429
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SSOT-6 Embossed Carrier Tape
Configuration:
Figure 3.0
SSOT-6 Reel Configuration:
Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.37
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
0.06
+/-0.02
SuperSOT
TM
-6 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. C
相關PDF資料
PDF描述
FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET(P溝道PowerTrench MOS場效應管)
FDC5614 60V P-Channel Logic Level PowerTrench MOSFET
FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6020C Complementary PowerTrench MOSFET
FDC602P P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場效應管)
相關代理商/技術參數
參數描述
FDC5612 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6
FDC5612_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET
FDC5612_F095 功能描述:MOSFET 60V 4.3A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC5612NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 60V 4.3A 6-Pin SuperSOT T/R
FDC5614 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET
主站蜘蛛池模板: 长白| 永安市| 桓台县| 涞源县| 建宁县| 南宁市| 兰溪市| 鹰潭市| 太保市| 桃源县| 台山市| 维西| 旬邑县| 望江县| 曲松县| 响水县| 浠水县| 台北县| 北安市| 定南县| 新田县| 浪卡子县| 金寨县| 林口县| 南安市| 夹江县| 崇左市| 石阡县| 河南省| 怀集县| 宜黄县| 四子王旗| 财经| 金塔县| 浠水县| 无锡市| 盐池县| 梁山县| 白河县| 平舆县| 曲周县|