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參數資料
| 型號： | FDD5810 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 60V, 35A, 27mOhm |
| 中文描述： | 7.7 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 226K |
| 代理商： | FDD5810 |
FDD5810 Rev. A (W)
www.fairchildsemi.com
F
2
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
35
35
7.7
Figure 4
45
88
0.59
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
GS
= 10V, T
C
= 52
o
C) (Note 1)
Drain Current Continuous (V
GS
= 5V, T
C
= 42
o
C) (Note 1)
Continuous (T
A
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
E
AS
P
D
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.7
52
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDD5810
Device
FDD5810
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 48V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
GS
= 5V
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
1
-
-
1.6
16.5
20.5
2
V
R
DS(ON)
Drain to Source On Resistance
20
27
m
-
39
48
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
g(th)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
1420
150
65
3.5
24
13
1.3
4.0
2.7
5.0
1890
200
100
-
34
18
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 35A
Dynamic Characteristics
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD5810_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench㈢ MOSFET |
| FDD5810_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench?? MOSFET 60V, 36A, 27m" |
| FDD5810_F085 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5810_SB82124 | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CHANNEL LOGIC LEVEL TRENCH MOSFET |
| FDD5810-F085 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm |
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