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參數資料
| 型號： | FDD5810 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 60V, 35A, 27mOhm |
| 中文描述： | 7.7 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 226K |
| 代理商： | FDD5810 |
FDD5810 Rev. A (W)
www.fairchildsemi.com
F
3
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 30V, I
D
= 35A
V
GS
= 5V, R
GS
= 11
-
-
-
-
-
-
-
130
-
-
-
-
90
ns
ns
ns
ns
ns
ns
12
75
26
34
-
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
I
SD
= 35A
I
SD
= 16A
I
F
= 35A, di/dt = 100A/
μ
s
I
F
= 35A, di/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
39
35
V
V
ns
nC
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1:
Package Limitation is 35A.
2:
Starting T
J
= 25°C, L = 110
μ
H, I
AS
= 28A, V
DD
= 54V, V
GS
= 10V.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD5810_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench㈢ MOSFET |
| FDD5810_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench?? MOSFET 60V, 36A, 27m" |
| FDD5810_F085 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5810_SB82124 | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CHANNEL LOGIC LEVEL TRENCH MOSFET |
| FDD5810-F085 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm |
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