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參數資料
| 型號： | FDD5810 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 60V, 35A, 27mOhm |
| 中文描述： | 7.7 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 4/7頁 |
| 文件大小： | 226K |
| 代理商： | FDD5810 |
FDD5810 Rev. A (W)
www.fairchildsemi.com
F
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
Normalized Power Dissipation vs Case
Temperature
Figure 2.
0
20
30
40
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
10
V
GS
= 5V
50
CURRENT LIMITED
BY PACKAGE
R
θ
JC
= 1.7
o
C/W
Maximum Continuous Drain Current vs
Case Temperature
Figure 3.
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
Normalized Maximum Transient Thermal Impedance
Figure 4.
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
600
30
I
D
,
t, PULSE WIDTH (s)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 5V
Peak Current Capability
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD5810_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench㈢ MOSFET |
| FDD5810_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench?? MOSFET 60V, 36A, 27m" |
| FDD5810_F085 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5810_SB82124 | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CHANNEL LOGIC LEVEL TRENCH MOSFET |
| FDD5810-F085 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm |
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