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參數資料
| 型號： | FDD6632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз |
| 中文描述： | 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 10/11頁 |
| 文件大小： | 241K |
| 代理商： | FDD6632 |
2002 Fairchild Semiconductor Corporation
FDD6632
Rev. B
F
SPICE Thermal Model
REV 23 March 2002
FDD6632T
CTHERM1 TH 6 2.7e-4
CTHERM2 6 5 2.9e-4
CTHERM3 5 4 6.4e-4
CTHERM4 4 3 7e-4
CTHERM5 3 2 8.2e-4
CTHERM6 2 TL 1.1e-3
RTHERM1 TH 6 4.8e-1
RTHERM2 6 5 8.2e-1
RTHERM3 5 4 9e-1
RTHERM4 4 3 1.2
RTHERM5 3 2 2.1
RTHERM6 2 TL 2.5
SABER Thermal Model
SABER thermal model FDD6632T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =2.7e-4
ctherm.ctherm2 6 5 =2.9e-4
ctherm.ctherm3 5 4 =6.4e-4
ctherm.ctherm4 4 3 =7e-4
ctherm.ctherm5 3 2 =8.2e-4
ctherm.ctherm6 2 tl =1.1e-3
rtherm.rtherm1 th 6 =4.8e-1
rtherm.rtherm2 6 5 =8.2e-1
rtherm.rtherm3 5 4 =9e-1
rtherm.rtherm4 4 3 =1.2
rtherm.rtherm5 3 2 =2.1
rtherm.rtherm6 2 tl =2.5
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6632_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз |
| FDD6635 | 功能描述:MOSFET 35V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 功能描述:MOSFET 35V PCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
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