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參數資料
| 型號： | FDD6632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз |
| 中文描述： | 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 8/11頁 |
| 文件大小： | 241K |
| 代理商： | FDD6632 |
2002 Fairchild Semiconductor Corporation
FDD6632
Rev. B
F
PSPICE Electrical Model
.SUBCKT FDD6632 2 1 3 ;
rev March 2002
Ca 12 8 1.8e-10
Cb 15 14 1.9e-10
Cin 6 8 2.35e-10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 32.05
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 3.84e-9
Ldrain 2 5 1.00e-9
Lsource 3 7 4e-9
RLgate 1 9 38.4
RLdrain 2 5 10
RLsource 3 7 40
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 12e-3
Rgate 9 20 4.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 3e-2
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*40),3))}
.MODEL DbodyMOD D (IS=9.5E-12 RS=2.3e-2 XTI=1 IKF=15.00 N=1.15 TRS1=1.0e-3 TRS2=8.0e-7
+ CJO=1.7e-10 TT=7e-9 M=0.47)
.MODEL DbreakMOD D (RS=1e-1 TRS1=1.12e-3 TRS2=1.25e-6)
.MODEL DplcapMOD D (CJO=8.1e-11 IS=1e-30 N=10 M=0.43)
.MODEL MmedMOD NMOS (VTO=1.76 KP=.6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=4.2)
.MODEL MstroMOD NMOS (VTO=2.08 KP=9 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=1.52 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=42 RS=.1)
.MODEL RbreakMOD RES (TC1=1.01e-3 TC2=1.00e-7)
.MODEL RdrainMOD RES (TC1=9e-3 TC2=4e-5)
.MODEL RSLCMOD RES (TC1=5E-3 TC2=1E-6)
.MODEL RsourceMOD RES (TC1=1.0e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-1.5e-3 TC2=-7e-6)
.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=1.2e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.6 VOFF=-0.1)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.1 VOFF=-0.6)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
14
13
S2B
CA
CB
EGS
EDS
14
8
13
8
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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相關代理商/技術參數 |
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| FDD6632_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз |
| FDD6635 | 功能描述:MOSFET 35V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 功能描述:MOSFET 35V PCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
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