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參數資料
| 型號： | FDD6632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз |
| 中文描述： | 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 9/11頁 |
| 文件大小： | 241K |
| 代理商： | FDD6632 |
2002 Fairchild Semiconductor Corporation
FDD6632
Rev. B
F
SABER Electrical Model
REV March 2002
template FDD6632 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=9.5e-12,rs=2.3e-2,xti=1,ikf=15.00,nl=1.15,trs1=1.0e-3,trs2=8.0e-7,cjo=1.7e-10,tt=7e-9,m=0.47)
dp..model dbreakmod = (rs=1e-1,trs1=1.12e-3,trs2=1.25e-6)
dp..model dplcapmod = (cjo=8.1e-11,isl=10e-30,nl=10,m=0.43)
m..model mmedmod = (type=_n,vto=1.76,kp=.6,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.08,kp=9,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.52,kp=0.03,is=1e-30, tox=1,rs=.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1.5,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.6,voff=-0.1)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.1,voff=-0.6)
c.ca n12 n8 = 1.8e-10
c.cb n15 n14 = 1.9e-10
c.cin n6 n8 = 2.35e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 32.05
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 3.84e-9
l.ldrain n2 n5 = 1.00e-9
l.lsource n3 n7 = 4e-9
res.rlgate n1 n9 = 38.4
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 40
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.01e-3,tc2=1.00e-7
res.rdrain n50 n16 = 12e-3, tc1=9e-3,tc2=4e-5
res.rgate n9 n20 = 4.2
res.rslc1 n5 n51 = 1e-6, tc1=5e-3,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3e-2, tc1=1.0e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-1.5e-3,tc2=-7e-6
res.rvtemp n18 n19 = 1, tc1=-1.8e-3,tc2=1.2e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/40))** 3))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
14
13
S2B
CA
CB
EGS
EDS
14
8
13
8
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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| FDD6635 | 功能描述:MOSFET 35V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 功能描述:MOSFET 35V PCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
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